We report the observation that AlSb layers
thinner than the epilayer critical thickness for the onset of plastic relaxation
undergo lattice relaxation when used as buffers for GaSb/AlSb superlattices on
(001) GaSb substrates. It is found that this is induced by the external stress
from the overlaying superlattice, and that the mechanism is consistent with
relaxation processes involving the nucleation and expansion of half-loops
earlier suggested for strained epilayers. Photoluminescence spectroscopy
conforms with the in-plane strains calculated from double-crystal and
small-angle X-ray diffraction measurements.
Source:IOPscience
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