The single crystalline III-V films on substrates such as silicon and germanium are preferred by researchers to enhance the performance of a MOSFET or CMOS. In this study, we investigated the possible factors responsible for generating twin crystal growth for III-antimonides, especially GaSb grown on Si(111). We tested several base templates such as Si(111)-√3 × √3-Ga, Si(111)-√3 × √3-In, Si(111)-direct, and we have varied the growth conditions through varying the substrate temperature and growth rate. The molecular beam epitaxy growth method was used to deposit GaSb films. Our results reflect that in absence of an initial layer of GaSb film grown at a low substrate temperature, the anti-phase domains and defect densities cannot be reduced which results in the formation of twin crystal. We found that the high substrate temperature during the growth is the deciding factor in generating twin crystal growth.
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