Orthogonal experiments of GaSb films growth
on GaAs(001) substrates have been designed and performed by using a
low-pressure metal–organic chemical vapor deposition (LP-MOCVD) system. The
crystallinities and microstructures of the produced films were comparatively
analyzed to achieve the optimum growth parameters. It was demonstrated that the
optimized GaSb thin film has a narrow full width at half maximum (358 arc sec)
of the (004) ω-rocking curve, and a smooth surface with a low root-mean-square
roughness of about 6 nm, which is typical in the case of the heteroepitaxial
single-crystal films. In addition, we studied the effects of layer thickness of
GaSb thin film on the density of dislocations by Raman spectra. It is believed
that our research can provide valuable information for the fabrication of
high-crystalline GaSb films and can promote the integration probability of
mid-infrared devices fabricated on mainstream performance electronic devices.
Source:IOPscience
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