The dependence of Ga K-edge
multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) effects
on the nearest neighbours in GaP, GaAs and GaSb semiconductor compounds with
the zinc blende structure has been comprehensively investigated by considering
the coordination environment within the first three shells around the Ga atoms.
It is revealed that in the case of GaP with a light element as the first
neighbour of the Ga absorber, the MS-EXAFS effects are negligibly weak with
respect to the single-scattering (SS) contribution. For GaAs and GaSb compounds
with heavier elements as the first neighbour of the Ga absorber, the MS effects
become increasingly important and are dominated by a triangular
double-scattering path DS2 (\mathrm {Ga}_{0} \to \mathrm {B}_{1} \to \mathrm
{B}_{2} \to \mathrm {Ga}_{0} ). The EXAFS contribution of the DS2 path
destructively interferes with that of the second shell single-scattering path
(SS2), with the amplitude ratio of DS2 to SS2 rising from 7% for GaP to 25 and
70% for GaAs and GaSb, respectively. This indicates that the second shell peak
magnitude for these compounds is increasingly damped by the MS effects as the
first nearest neighbour goes from P to Sb. Based on these results, we present a
generalized and simplified high-shell MS-EXAFS analysis method for compounds
with the open structure of zinc blende.
Source:IOPscience
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