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GaSb( Gallium Antimonide) wafer PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We also round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with EPD < 1000 cm -3 . GaSb crystal has high uniformity of electrical parameters and low defect density , suitable for MBE or  MOCVD epitaxial growth .  We have "epi ready " GaSb products with wide choice in exact or off orientation , low or high doped concentration and good surface finish . Please contact us for more product information . 1)2",3"GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:P/undoped;P/Si;P/Zn Nc(cm-3):(1~2)E17   Mobility（cm2/V ·s):600~700  Growth Method:CZ Polish:SSP 2)2"GaSb wafer Orientation:(100)±0.5° Thickness(μm):500±25;600±25 Type/Dopant:N/undoped;P/Te Nc(cm-3):(1~5)E17   Mobility（cm2/V ·s):2500~3500 Growth Method:LEC Polish:SSP 3)2"GaSb wafer Orientation:(111)A±0.5° Thickness(μm):500±25 Type/Dopant:N/Te;P/Zn Nc(cm-3):(1~5)E17   Mobility（cm2/V ·s):2500~3500;200~500  Growth Method:LEC Polish:SSP 4)2"GaSb wafer Orientation:(111)B±0.5° Thickness(μm):500±25;450±25 Type/Dopant:N/Te;P/Zn Nc(cm-3):(1~5)E17   Mobility（cm2/V ·s):2500~3500;200~500  Growth Method:LEC Polish:SSP 5)2"GaSb wafer Orientation:(111)B 2deg.off Thickness(μm):500±25 Type/Dopant:N/Te;P/Zn Nc(cm-3):(1~5)E17   Mobility（cm2/V ·s):2500~3500;200~500  Growth Method:LEC Polish:SSP
	Relative products: InAs wafer InSb wafer InP wafer GaAs wafer GaSb wafer GaP wafer
	GaSb material presents interesting properties for single junction thermophotovoltaic (TPV) devices. GaSb: Te single crystal grown with Czochralski (Cz) or modified Czo- chralski (Mo-Cz) methods are presented and the problem of Te homogeneity discussed. As the carrier mobility is one of the key points for the bulk crystal, Hall measurements are carried out. We present here some complementary developments based on the material processing point of view: the bulk crystal growth, the wafer preparation, and the wafer etching. Subsequent steps after these are related to the p / no r n/p junction elaboration. Some results obtained for different thin-layer elaboration approaches are presented. So from the simple vapor phase diffusion process or the liquid phase epitaxy process up to the metal organic chemical vapor deposition process we report some material specificity. DOI: 10.1115/1.2734570  If you are more interesting in insb wafer,Please send emails to us;sales@powerwaywafer.com,and visit our website:www.powerwaywafer.com.