2018年12月26日星期三

Cathodoluminescence from Er2O3-doped n-type GaSb:Te crystals


The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescence (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on the local Te concentration.


Source:IOPscience

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2018年12月12日星期三

The role of Ce dopant on the electrical properties of GaSb single crystals, measured by far-infrared Fourier transform spectroscopy


An analysis of the electronic properties of Ce-doped liquid-encapsulated Czochralski-grown GaSb single crystals has been carried out by using far-infrared Fourier transform spectroscopy. Some key parameters related to the electrical behaviour of these materials such as carrier type, density, mobility and plasma frequency have been determined by using this technique. These parameters have been compared to those obtained from Hall measurements. A comparative study has also been performed with new data from IRTF spectra obtained from pure p-type GaSb. The p-type nature of the Ce-doped GaSb crystals has been ascertained.


Source:IOPscience

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