GaSb wafer: 七月 2018

2018年7月24日星期二

Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure

InAs/GaSb coupled quantum well heterostructures are important semiconductor systems with applications ranging from spintronics to photonics. Most recently, InAs/GaSb heterostructures have been identified as candidate two-dimensional topological insulators, predicted to exhibit helical edge conduction via fully spin-polarised carriers. We study an InAs/GaSb double quantum well heterostructure with an AlSb barrier to decouple partially the 2D electrons and holes, and find conduction consistent with a 2D hole gas, with an effective mass of 0.235 ± 0.005 m0, existing simultaneously with hybridised carriers with an effective mass of 0.070 ± 0.005 m0, where m0 is the bare electron mass.

Source:IOPscience

For more information, please visit our website: www.semiconductorwafers.net,

send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com

2018年7月1日星期日

Interface morphology, chemistry and dislocation structures of wafer-bonded compound semiconductors

The interface morphology, chemistry and dislocation structures of a few typical wafer-bonded compound semiconductors were characterized. The relations between the interface dislocation structures and electrical performances were discussed. The interface chemistry of these semiconductors was analysed by using electron energy loss spectra. In general, different wafer annealing conditions could result in varied interface crystalline to amorphous real ratios. It has been found that the interface oxides start to segregate and form the scattered interface amorphous nanoinclusions upon wafer thermal annealing. A mismatched wafer-bonded heterointerface is accommodated by the elastic strain relief through the combination of Lomer edge dislocations and interface amorphous nanoinclusions. Different annealing temperatures may result in different morphologies and oxygen concentrations of the nanoinclusions. It is believed that the formation of these interface nanoinclusions with possibly highly concentrated oxygen is a result of the interface atomic diffusion and oxide relocation processes.