2019年11月27日星期三

Reflectivity modulator based on GaSb/GaAs heterostructure

A structure of gallium antimonide (GaSb) and gallium arsenide (GaAs) wafers is built to modulate light reflectivity at CO2 laser wavelength. A quantum well composed of GaSb/GaAs heterojunction with highly doped GaAs up to 3×1018 cm-3 is inserted inside a layer structure. A grating of periodic structure of GaAs and gold layer is added just below the substrate. Gsolver software is used to determine the reflectivity of incident light with the existence of free carriers. A voltage is applied to the doped layer to deplete the free electrons and the reflectivity is determined again. The significant difference in reflectivity between the two cases can be used to build a light reflectivity modulator device.

Source:IOPscience

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2019年11月20日星期三

Interfacial and mechanical characterization of wafer-bonded GaSb/amorphous α-(Ga,As)/GaAs structure for GaSb-on-insulator applications

In this study, the feasibility of using wafer-bonding technology to fabricate a GaSb semiconductor on GaAs substrates for potentially creating a GaSb-on-insulator structure has been demonstrated. A GaSb wafer has been bonded on two types of GaAs substrates: (1) a regular single crystal semi-insulating GaAs substrate and (2) the GaAs wafers with pre-deposited low-temperature amorphous α-(Ga,As) layers. The microstructures and interface adhesion studies have been carried out on these wafer-bonded semiconductors. It has been found that the GaSb-on-α-(Ga,As) wafers have shown enhanced interface adhesion and lower temperature bonding capability.

Source:IOPscience


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2019年11月11日星期一

nvestigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

In this report, we present results of an experimental investigation of a near mid-gap trap energy level in InAs10 ML/GaSb10 ML type-II superlattices. Using thermal analysis of dark current, Fourier transform photoluminescence and low-frequency noise spectroscopy, we have examined several wafers and diodes with similar period design and the same macroscopic construction. All characterization techniques gave nearly the same value of about 140 meV independent of substrate type. Additionally, photoluminescence spectra show that the transition related to the trap centre is temperature independent. The presented methodology for thermal analysis of dark current characteristics should be useful to easily estimate the position of deep energy levels in superlattice photodiodes.

Source:IOPscience


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2019年11月6日星期三

Thermophotovoltaic furnace–generator for the home using low bandgap GaSb cells

It is well known that distributed combined heat and power (CHP) systems for commercial and industrial buildings are economically desirable because they conserve energy. Here, a thermophotovoltaic (TPV) unit is described that brings CHP into the home providing both heat and electric power by replacing the typical home heating furnace with a combined TPV furnace–generator. First, the design of a 1.5 kWelectric/12.2 kWthermal TPV furnace–generator is described along with the key components that make it possible. Diffused junction GaSb cells are one of these key components. Secondly, an economic cost target is determined for this system where the cost of the photovoltaic array will be key to the economical implementation of this concept. Finally, it is argued that the GaSb cells and arrays can be manufactured at the required low cost. The cost target can be reached because the GaSb cells in the TPV furnace–generator can produce an electrical power density of 1 W cm−2 which is 100 times higher than the typical solar cell. The cost target can also be reached because the GaSb cell fabrication process parallels the silicon solar cell process where no toxic gases are used, no wafer polish is required and cast polycrystalline cells can be used.

Source:IOPscience

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