Lightly Te-doped GaSb samples grown by the
liquid encapsulated Czochralski (LEC) method have been studied by Hall
measurements and low-temperature PL spectroscopy. The results suggest that
acceptor-related antisite is the dominant defect in n-type GaSb with low
Te-doping concentration. As the Te concentration increases, gallium vacancy
related defects become the main acceptor. A new band of around 665 meV is
observed in the GaSb sample with the lowest Te-doping concentration. The
variation of the acceptor defects and their influence on the electronic and
optical property on the n-GaSb single crystal are discussed based on the
results.
Source:IOPscience
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