GaSb wafer: 五月 2018

2018年5月15日星期二

Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures

The effects of HCl treatment and predeposition vacuum annealing (VA) on n-type GaSb/GaAs metal–oxide–semiconductor (MOS) structures with the atomic layer deposition (ALD) of Al2O3dielectrics are studied. We obtained MOS structures with good Fermi level modulation by HCl treatment prior to the deposition of Al2O3. From X-ray photoelectron spectroscopy (XPS) analysis, we found that the Ga2O3 content increases during the Al2O3 deposition, whereas the amounts of Sb components are reduced. The excess growth of Ga2O3 is inhibited by the reductions in the amounts of Sb components by the HCl treatment. Further reductions in the amounts of Sb components are observed following predeposition VA, indicating a lower density of states (Dit). However, the frequency dispersion in the capacitance–voltage (C–V) characteristics increases with predeposition VA at higher temperatures.

Source:IOPscience

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2018年5月8日星期二

Efficient lateral confinement by an oxide aperture in a mid-infrared GaSb-based vertical light-emitting source

The use of lateral oxidation for electrical and optical confinement on a GaSb-based mid-infrared vertical light-emitting diode is demonstrated in this paper. The metamorphic growth of (Al)GaAs above a tunnel junction grown on the GaSb-based resonant-cavity light-emitting diode enables good structural quality of the As-based layers and oxidation of the AlAs embedded film. Oxide-confined devices with emission wavelength around 2.6 µm are demonstrated, with no noticeable degradation from the oxidation thermal treatment. Such an efficient oxide confinement scheme can be applied for the realization of high-performance mid-infrared vertical-cavity lasers.