The effect of sample temperature on GaSb nanocell fabrication using a focused ion beam was investigated. Two-dimensional nanocell lattices with a cell interval of 100 nm were fabricated on GaSb at 135 K and 293 K. It was shown that the lattice develops slowly at 135 K with increasing ion dose, and that it does so quickly at 293 K, being disturbed by newly created secondary voids. These results were discussed using the migration parameters of point defects deduced from the recovery data of electron-irradiated GaSb by [Thommen, Phys. Rev. 161, 769 (1967)].
First, GaSb epilayers were grown on (0 0 1)GaAs substrates by molecular beam epitaxy. We determined that the GaSb layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the peak wavelength of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 µm. The SL interface between InAs and GaSb is InSb-like.