We report a technique for formation of two-dimensional (2D) nanodot (ND) patterns on gaillium antimoide (GaSb) using a nanosecond pulsed laser irradiation with 532 nm wavelength. The patterns have formed because of the interference and the self-organization under energy deposition of the laser irradiation, which induced the growth of NDs on the local area. The NDs are grown and shrunken in the pattern by energy depositions. In the laser irradiation with average laser energy density of 35 mJ cm−2, large and small NDs are formed on GaSb surface. The large NDs have grown average diameter from 160 to 200 nm with increase of laser pulses, and the small NDs have shrunken average diameter from 75 to 30 nm. The critical dot size is required about 107 nm for growth of the NDs in the patterns. Nanosecond pulsed laser irradiation can control the self-organized ND size on GaSb in air as a function of the laser pulses.