Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

We report on a type-II InAs or GaSb strained layer superlattice (SLS) photodetector (λ  ~4.3 µm at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation arrays to minimize threading dislocations in the active region. At 77 K and 0.1 V of the applied bias, the dark current density was equal to 6 × 10−4 A cm−2 and the maximum specific detectivity D* was estimated to 1.2 × 1011 Jones (at 0 V). At 293 K, the zero-bias D* was found to be ~109 Jones which is comparable to the nBn InAs/GaSb SLS detector grown on the GaSb substrate.

Source:IOPscience

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