GaSb is the most suitable substrate in
the epitaxial growth of mixed semiconductors of GaSb system. In this work,
Te-doped GaSb bulk crystals with different doping concentration have been
annealed at 550 °C for 100 h in ambient antimony. The annealed samples have
been studied by Hall effect measurement, infrared (IR) optical transmission,
Glow discharge mass spectroscopy (GDMS) and photoluminescence (PL)
spectroscopy. After annealing, Te-doped GaSb samples exhibit a decrease of
carrier concentration and increase of mobility, along with an improvement of
below gap IR transmission. Native acceptor related electrical compensation
analysis suggests a formation of donor defect with deeper energy level. The
mechanism of the variation of the defect and its influence on the material
properties are discussed.
Source:IOPscience
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