The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescence (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on the local Te concentration.
Source:IOPscience
For more information, please visit our website: www.semiconductorwafers.net,
send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com
没有评论:
发表评论