tag:blogger.com,1999:blog-66459535401618791782024-03-20T01:49:47.648-07:00GaSb waferPowerway Advanced Material Co.,LTD (PAM-XIAMEN) provides GaSb wafer ( Gallium Antimonide ) to optoelectronics industry in diameter up to 2 inch . Gallium Antimonide is supplied in polished wafer form.powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.comBlogger96125tag:blogger.com,1999:blog-6645953540161879178.post-10788509605000496802021-08-22T20:42:00.000-07:002021-08-22T20:42:46.997-07:00How to Make Diamond Wafers at PAM XIAMEN ?<iframe frameborder="0" height="270" src="https://youtube.com/embed/XQEFCeY06Do" style="background-image: url(https://i.ytimg.com/vi/XQEFCeY06Do/hqdefault.jpg);" width="480"></iframe>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-28441953522717405452020-06-08T19:28:00.001-07:002020-06-08T19:28:59.462-07:00Semiconductor Wafer technology at Xiamen PowerwayPAM XIAMEN<iframe allowfullscreen="" frameborder="0" height="270" src="https://www.youtube.com/embed/UpyERmR05y8" width="480"></iframe>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-33183658096495447122020-04-13T18:57:00.000-07:002020-04-13T18:57:06.943-07:00Effect of temperature on GaSb nanocell lattice fabrication by void formation and development utilizing a focused ion beam<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">The effect of sample temperature on GaSb nanocell fabrication using a focused <b>ion beam</b> was investigated. Two-dimensional nanocell lattices with a cell interval of 100 nm were fabricated on GaSb at 135 K and 293 K. It was shown that the lattice develops slowly at 135 K with increasing ion dose, and that it does so quickly at 293 K, being disturbed by newly created secondary<b> voids</b>. These results were discussed using the migration parameters of point defects deduced from the recovery data of electron-irradiated <b>GaSb</b> by [Thommen, Phys. Rev. 161, 769 (1967)].</span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-76857186640827777442020-04-07T19:22:00.004-07:002020-04-07T19:22:37.932-07:00MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">First, GaSb epilayers were grown on (0 0 1)GaAs substrates by molecular beam epitaxy. We determined that the <b>GaSb</b> layers had very smooth surfaces using atomic force microscopy. Then, very short period InAs/GaSb superlattices (SLs) were grown on the GaSb buffer layer. The optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and <b>high resolution</b> transition <b>electron microscopy</b>. In order to determine the interface of SLs, the samples were tested by Raman-scattering spectra at room temperature. Results indicated that the <b>peak wavelength</b> of SLs with clear interfaces and integrated periods is between 2.0 and 2.6 µm. The SL interface between InAs and GaSb is InSb-like.</span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-45553918591045419092020-03-29T20:50:00.003-07:002020-03-29T20:50:38.309-07:00Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">A film of <b>GaSb</b> grown epitaxially on a Si substrate is a direct transition semiconductor useful for application as a light source in Si photonics and channel material in next-generation field effect transistors because its energy bandgap is close to the optical fibre communication wavelength and it possesses high carrier mobility. Here, we report a novel method for heteroepitaxial growth of high-quality GaSb/Si films, despite having a lattice mismatch as large as ~ 12%, using elastically strain-relaxed GaSb nanodots with ultrahigh density as seed crystals for film growth. The nanodot seed crystals were grown epitaxially by restricted contact with the Si substrate through nanowindows in an ultrathin SiO</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> film on the Si substrate. A light-emitting diode containing GaSb/Si films with a thickness of ~ 90 nm fabricated by this method operated at room temperature. The <b>growth method</b> was also used to fabricate AlGaSb films of high quality. Our method provides a new avenue for heteroepitaxial growth of high-quality film in systems with large lattice mismatch.</span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-73546321649282696542020-03-24T01:44:00.001-07:002020-03-24T01:44:10.883-07:00Edge transport in the trivial phase of InAs/GaSb<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">We present transport and scanning SQUID measurements on InAs/<b>GaSb</b> double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, <b>magnetic field,</b> and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.</span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-81691571058046550192020-03-18T18:55:00.003-07:002020-03-20T01:02:21.046-07:00Selective and non-selective wet-chemical etchants for GaSb-based materials<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">A series of wet-chemical etchants for materials lattice-matched to <b>GaSb</b> was investigated. The etch rates for GaSb, AlAsSb, InAsSb and <b>InAs</b> with etch solutions based on KNa–<b>tartaric acid</b> (C</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">4</span><span style="color: #333333;">H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">4</span><span style="color: #333333;">KNaO</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">6</span><span style="color: #333333;">), citric acid (C</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">6</span><span style="color: #333333;">H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">8</span><span style="color: #333333;">O</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">7</span><span style="color: #333333;">) and hydrochloric acid were determined and the selectivities for the four different etching solutions are shown. The applicability of the selectivity between GaSb and InAs (respectively InAsSb) with C</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">4</span><span style="color: #333333;">H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">4</span><span style="color: #333333;">KNaO</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">6</span><span style="color: #333333;">:HCl: H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">O</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">:H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">O (selectivity higher than 15:1) and C</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">6</span><span style="color: #333333;">H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">8</span><span style="color: #333333;">O</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">7</span><span style="color: #333333;">:H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">O</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> (selectivity around 1:100) is proved by a substrate removal experiment. Also a new <b>etchant</b> for AlAsSb is proposed: HCl:H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">O</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">:H</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;">O etches AlAsSb versus GaSb with a selectivity of 5:1 and the GaSb surface underneath is smooth and without any remaining particles of oxidized aluminium.</span></span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;"><br /></span></span><span style="font-size: x-small;"><span style="color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-85507661219227434812020-03-11T20:35:00.000-07:002020-03-20T01:02:31.082-07:00Selective lateral etching of InAs/GaSb tunnel junctions for mid-infrared photonics<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">We have studied selective etching of the InAs/<b>GaSb</b> tunnel junction (TJ). We show that efficient lateral etching can be achieved with a citric acid:<b>hydrogen peroxide solution</b>. A slight etching anisotropy of around 10% is observed between [1 1 0] and [1 0 0] crystal orientations. The electrical properties of etched TJs do not depend on the diameter of the device which reveals efficient passivation and the absence of <b>current leakage</b>. Specific resistivities in the 2–5 </span><span style="border: 0px; color: #333333; font-stretch: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;"> 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−5</span><span style="color: #333333;"> Ω cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−2</span><span style="color: #333333;"> range are measured even for diameters compatible with vertical-cavity surface emitting lasers. This work demonstrates that selective lateral etching of an InAs/GaSb tunnel junction is an efficient means to confine the current in GaSb-based heterostructures.</span></span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;"><br /></span></span><span style="font-size: x-small;"><span style="color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-39866118431214495382020-03-05T18:38:00.005-08:002020-03-20T01:02:39.253-07:00Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">A very long wavelength infrared(VLWIR) focal plane array based on <b>InAs</b>/GaSb type-II super-lattices is demonstrated on a <b>GaSb substrate</b>. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 </span><img align="MIDDLE" alt="${\rm{\mu }}$" data-src="https://cdn.iopscience.com/images/1674-1056/26/1/018505/cpb_26_1_018505_ieqn1.gif" src="https://cdn.iopscience.com/images/1674-1056/26/1/018505/cpb_26_1_018505_ieqn1.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> m, at 77 K. A 320</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;">256 VLWIR <b>focal plane</b> array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of −20 mV, yielding a peak specific detectivity of </span><img align="MIDDLE" alt="$5.89\times {10}^{10}$" data-src="https://cdn.iopscience.com/images/1674-1056/26/1/018505/cpb_26_1_018505_ieqn2.gif" src="https://cdn.iopscience.com/images/1674-1056/26/1/018505/cpb_26_1_018505_ieqn2.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> cm</span><img align="absmiddle" alt="centerdot" src="https://ej.iop.org/icons/Entities/centerdot.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">Hz </span><img align="MIDDLE" alt="${}^{1/2}$" data-src="https://cdn.iopscience.com/images/1674-1056/26/1/018505/cpb_26_1_018505_ieqn3.gif" src="https://cdn.iopscience.com/images/1674-1056/26/1/018505/cpb_26_1_018505_ieqn3.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><img align="absmiddle" alt="centerdot" src="https://ej.iop.org/icons/Entities/centerdot.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">W</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−1</span><span style="color: #333333;">. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperatur</span></span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;"><br /></span></span><span style="font-size: x-small;"><span style="color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-84556205937587317022020-02-26T18:06:00.002-08:002020-03-20T01:02:47.442-07:00The intrinsic relationship between the kink-and-tail and box-shaped zinc diffusion profiles in n-GaSb<span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif;">Different diffusion sources were used to study Zn diffusion in n-<b>GaSb</b>. We found that the Ga atoms from the diffusion sources suppressed the formation of the high-concentration surface diffusion fronts in Zn profiles, thus converting the kink-and-tail-shaped profile to the box-shaped profile. Our analysis demonstrated that both the surface and the tail regions in the kink-and-tail profiles showed high-quality <b>regularities</b>. The analysis also revealed that the formation mechanism of the box profiles is the same as that of the tail region of the kink-and-tail profiles. The similarities of the photoluminescence signals between the main region of the box profiles and the tail region of the kink-and-tail profiles substantiated our findings.</span></span><br />
<span style="font-size: x-small;"><span style="color: #333333;"><span style="font-family: "arial" , "helvetica" , sans-serif; font-size: xx-small;"><br /></span></span><span style="color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-23538482047586650602020-02-19T18:54:00.002-08:002020-03-20T01:02:59.858-07:00Electron g-factor study in Ga1 − xInxAsySb1 − y–GaSb and GaSb–Ga1 − xInxAsySb1 − y–GaSb quaternary alloy semiconductor spherical quantum dots<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">Within an interpolation scheme, we have determined the electron </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">g</i><span style="color: #333333;">-factor and the Kane interband energetic parameter of Ga</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1 − <i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i></span><span style="color: #333333;">In</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i></span><span style="color: #333333;">As</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">y</i></span><span style="color: #333333;">Sb</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1 − <i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">y</i></span><span style="color: #333333;">–<b>GaSb</b> semiconductors quaternary alloy and used them to determine the electron </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">g</i><span style="color: #333333;">-factor in GaSb–Ga</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1 − <i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i></span><span style="color: #333333;">In</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i></span><span style="color: #333333;">As</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">y</i></span><span style="color: #333333;">Sb</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1 − <i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">y</i></span><span style="color: #333333;">–GaSb spherical quantum dots (SQDs) as well as to calculate the Landau levels. In the low-dimensional systems a framework of an eight-band effective-mass model in which the contribution of the conduction remote bands and the </span><img align="MIDDLE" alt="\vec{k}\cdot \vec{p}" data-src="https://cdn.iopscience.com/images/0268-1242/26/10/105005/sst387374ieqn1.gif" src="https://cdn.iopscience.com/images/0268-1242/26/10/105005/sst387374ieqn1.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">mixing between the conduction band Γ</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">c</i></span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">6</span><span style="color: #333333;"> and the valence bands Γ</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">v</i></span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">8</span><span style="color: #333333;"> and Γ</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">v</i></span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">7</span><span style="color: #333333;"> states are considered. Our results show that the dependence of the bulk electron </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">g</i><span style="color: #333333;">-factor as a function of </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i><span style="color: #333333;"> can be fit with a cubic polynomial. We have established a relation between the electron </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">g</i><span style="color: #333333;">-factor and both the radius and the indium concentration in GaSb–Ga</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1 − <i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i></span><span style="color: #333333;">In</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">x</i></span><span style="color: #333333;">As</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;"><i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">y</i></span><span style="color: #333333;">Sb</span><span style="border: 0px; color: #333333; font-stretch: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">1 − <i style="border: 0px; font-stretch: inherit; font-variant: inherit; font-weight: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">y</i></span><span style="color: #333333;">–GaSb SQDs. For these quaternary SQDs with a parabolic confining potential we have found that the difference between the electron energy levels corresponding to spin-up and spin-down states is larger (~ 10 meV) than the corresponding states in GaAs–(Ga, Al)As quantum wells (QWs) (~ 0.2 meV) of comparable dimensions and increases with the applied magnetic field.</span></span><br />
<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;"><br /></span></span><span style="font-size: x-small;"><span style="color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif;"><span style="font-family: Arial, Helvetica, sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-73425489270723044892020-02-12T18:45:00.003-08:002020-02-12T18:45:53.915-08:00Passivation properties of CdS thin films grown by chemical bath deposition on GaSb: the influence of the S/Cd ratio in the solution and of the CdS layer thickness on the surface recombination velocity<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">Evidences of the passivation effect are given when thin films of CdS are deposited on <b>GaSb</b> crystalline substrates, using a bath chemical deposition method. The passivation process is studied through photoacoustic and photoluminescence experiments. The surface recombination velocity calculated from photoacoustic measurements decreases and the radiative recombination rate as measured from photoluminescence spectra increases when the nominal S/Cd ratio in the layer deposition solution increases. The influence of the CdS <b>layer thickness</b> on the surface passivation of GaSb is also studied.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #333333;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;"><br /></span><span style="background-color: white; color: #222222;"></span><span style="background-color: white; color: #333333;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-37178948353970411842020-01-20T23:06:00.003-08:002020-03-20T01:03:14.981-07:00Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates<span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="color: #333333;">The growth of Sb nanowires on <b>GaSb</b>(111)A substrates is studied by </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">in situ</i><span style="color: #333333;"> azimuthal scan reflection <b>high-energy electron diffraction</b> (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the </span><img align="MIDDLE" alt="$\langle \bar {2}10\rangle $" data-src="https://cdn.iopscience.com/images/0957-4484/23/23/235301/nano421198ieqn1.gif" src="https://static.iopscience.com/2.25.0/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> and the GaSb crystal along </span><img align="MIDDLE" alt="$\langle \bar {1}10\rangle $" data-src="https://cdn.iopscience.com/images/0957-4484/23/23/235301/nano421198ieqn2.gif" src="https://static.iopscience.com/2.25.0/img/lazy-loading-placeholder.gif" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy.</span></span><br />
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<span style="font-size: x-small;"><span style="color: #222222; font-family: "arial" , "tahoma" , "helvetica" , "freesans" , sans-serif;"><span style="font-family: "arial" , "helvetica" , sans-serif;"><span style="text-align: justify;">Source:IOPscience</span></span></span></span><br />
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<span style="font-size: x-small;"><span style="color: #777777; font-family: "arial" , "helvetica" , sans-serif; text-align: start;">For more information, please visit our website: </span><a href="https://www.powerwaywafer.com/" style="box-sizing: border-box; color: #0555b8; font-family: Arial, Helvetica, sans-serif; outline: none !important; text-align: start; text-decoration-line: none;">https://www.powerwaywafer.com</a><span style="color: #777777; font-family: "arial" , "helvetica" , sans-serif; text-align: start;">,</span><br style="box-sizing: border-box; color: #777777; font-family: Arial, Helvetica, sans-serif; text-align: start;" /><span style="color: #777777; font-family: "arial" , "helvetica" , sans-serif; text-align: start;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="box-sizing: border-box; color: #0555b8; font-family: Arial, Helvetica, sans-serif; outline: none !important; text-align: start; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="color: #777777; font-family: "arial" , "helvetica" , sans-serif; text-align: start;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="box-sizing: border-box; color: #0555b8; font-family: Arial, Helvetica, sans-serif; outline: none !important; text-align: start; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></div>
powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-10093996607503159242020-01-13T19:22:00.000-08:002020-01-13T19:22:03.545-08:00Below bandgap optical absorption in tellurium-doped GaSb<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">Enhancement in below bandgap room temperature infrared transmission has been observed in tellurium (Te)-doped <b>GaSb</b> bulk crystals. The effect of Te concentration on the transmission characteristics of GaSb has been experimentally and theoretically analysed. Undoped GaSb is known to exhibit p-type conductivity with residual hole concentration of the order of (1–2) </span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;"> 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">17</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">−3</span><span style="color: #333333;"> at room temperature due to the formation of native defects. For such samples, inter-valence band absorption has been found to be the dominant absorption mechanism. The residual holes could be compensated by n-type dopants such as Te. With increasing Te concentration, free carrier absorption due to electrons and inter-valley transitions in the conduction subband become significant. The dependences of various absorption mechanisms as a function of wavelength have been discussed in this paper.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #333333;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;"><br /></span><span style="background-color: white; color: #222222;"></span><span style="background-color: white; color: #333333;">For more information, please visit our website: <a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #333333;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-27403719122418918912020-01-07T17:38:00.002-08:002020-01-07T17:38:35.770-08:00Room Temperature CW Operation of GaSb/AlGaSb MQW Laser Diodes Grown by MBE<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">CW operation was achieved by a mesa-stripe (10 µm wide and 200 µm long) GaSb(12 nm)/Al</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">0.35</span><span style="color: #333333;">Ga</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">0.65</span><span style="color: #333333;">Sb(3 nm) modified multi-quantum-well (MQW, 6 wells) laser diode grown by molecular beam epitaxy (MBE) with threshold current </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">I</i><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">th</span><span style="color: #333333;">=145 mA at 14°C. Lasing wavelength was 1.662 µm at 9°C. Keys to this achievement were optimizations in (i) MBE growth condition, (ii) layer structure of the MQW wafer (introduction of a superlattice buffer layer and high barrier layers in MQW), and (iii) device fabrication processes. This is the first realization of room temperature cw operation among any type of laser diodes made from an Al-Ga-Sb material system.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;"><span style="background-color: #fefdfa; color: #333333;">Source:IOPscience</span></span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;"><br style="background-color: #fefdfa; color: #333333;" /><span style="background-color: #fefdfa; color: #333333;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: #fefdfa; color: #333333;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: #fefdfa; color: #333333;"><a href="http://www.semiconductorwafers.net/" style="color: #7d181e; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: #fefdfa; color: #333333;" /><span style="background-color: #fefdfa; color: #333333;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="background-color: #fefdfa; color: #7d181e; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="background-color: #fefdfa; color: #333333;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="background-color: #fefdfa; color: #7d181e; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-60050933803641692772020-01-07T17:36:00.003-08:002020-01-07T17:36:40.147-08:00H 2 O 2 : HF : C 4 O 6 H 6 ( Tartaric Acid ) : H 2 O Etching System for Chemical Polishing of GaSb<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">We present the results of a study of </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn1.jpg" src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn1.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> solution for chemical polishing of </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn2.jpg" src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn2.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> wafers. The influence of etching solution composition on surface morphology was studied. The solutions investigated varied in </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn3.jpg" src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn3.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> (2.0–3.0 mol) and </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn4.jpg" src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn4.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;">(0.0–5.0 mol) concentrations, but contained a constant concentration of tartaric acid (0.7 mol). It was found that the etchant has excellent polishing properties for </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn5.jpg" src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn5.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> wafers when the </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn6.jpg" src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn6.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> concentration was less than 1.5 mol. For </span><img align="MIDDLE" alt="" data-src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn7.jpg" src="https://cdn.iopscience.com/images/1945-7111/142/10/L189/jes_142_10_L189ieqn7.jpg" style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: auto; line-height: inherit; margin: 0px; max-width: 100%; padding: 0px; vertical-align: middle; width: auto;" /><span style="color: #333333;"> concentration larger than 1.5, the etchant solution produced rough surfaces. The dependencies of the etching rate on solution composition, temperature, and etching time were studied.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;"><span style="background-color: #fefdfa; color: #333333;">Source:IOPscience</span></span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;"><br style="background-color: #fefdfa; color: #333333;" /><span style="background-color: #fefdfa; color: #333333;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: #fefdfa; color: #333333;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: #fefdfa; color: #333333;"><a href="http://www.semiconductorwafers.net/" style="color: #7d181e; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: #fefdfa; color: #333333;" /><span style="background-color: #fefdfa; color: #333333;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="background-color: #fefdfa; color: #7d181e; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="background-color: #fefdfa; color: #333333;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="background-color: #fefdfa; color: #7d181e; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-49683446009914844642019-12-25T17:14:00.001-08:002019-12-25T17:14:55.031-08:00Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">Without any assumptions regarding residual impurity species in an undoped semiconductor, it is experimentally demonstrated that the densities and energy levels of impurities can be precisely determined by the graphical peak analysis method based on Hall-effect measurements, referred to as free carrier concentration spectroscopy (FCCS). Using p-type undoped <b>GaSb </b>epilayers grown by molecular beam epitaxy (MBE), the densities and energy levels of several acceptor species are accurately determined. Five acceptor species are detected in the undoped<b> GaSb </b>epilayers grown by MBE, while two are also found in p-type undoped GaSb wafers. A 21–41 meV acceptor and a 75–99 meV acceptor exist both in the epilayers and in the wafer. On the other hand, a 164–181 meV acceptor is detected in epilayers grown at an Sb</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">4</span><span style="color: #333333;">/Ga flux beam equivalent pressure ratio of 8 or 10, while a 259 meV acceptor is found in the epilayer grown at Sb</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">4</span><span style="color: #333333;">/Ga = 6. In addition, a very shallow acceptor, which is completely ionized at 80 K, is found in the epilayers. The densities of the very shallow acceptor and the 21–41 meV acceptor are minimum at Sb</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">4</span><span style="color: #333333;">/Ga = 8, which makes the hole concentration lowest in the temperature range of the measurement.</span></span><br />
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<span style="font-size: x-small;"><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;">Source:IOPscience</span></span><br />
<span style="font-size: x-small;"><br style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;" /><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;"><a href="http://www.semiconductorwafers.net/" style="color: #7d181e; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;" /><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="background-color: #fefdfa; color: #7d181e; font-family: Arial, Helvetica, sans-serif; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="background-color: #fefdfa; color: #7d181e; font-family: Arial, Helvetica, sans-serif; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-73386752894741297202019-12-18T18:07:00.003-08:002019-12-18T18:07:38.836-08:002.2–2.7 μm side wall corrugated index coupled distributed feedback GaSb based laser diodes<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">We report on the modeling, growth, processing, characterization and integration in a gas detection setup of side wall corrugated distributed feed-back antimonide diode lasers emitting at 2.28 and 2.67 </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">μ</i><span style="color: #333333;">m. The laser structures were grown by molecular beam epitaxy on <b>GaSb</b> substrate. Ridge lasers were fabricated from the grown wafers according to the following process: a second order Bragg grating was defined on the sides of the ridges by interferometric lithography, optical lithography and etched in a Cl-based inductively coupled plasma reactor. The devices exhibit a power reaching 40 mW, a side mode suppression ratio better than 28 dB and a tuning range of 3 nm at room temperature. One of these devices was successfully integrated in a tunable diode laser absorption spectroscopy setup, thus demonstrating that they are suitable for gas analysis.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: #fefdfa; color: #333333;">Source:IOPscience</span><br style="background-color: #fefdfa; color: #333333;" /><span style="background-color: #fefdfa; color: #333333;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: #fefdfa; color: #333333;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: #fefdfa; color: #333333;"><a href="http://www.semiconductorwafers.net/" style="color: #7d181e; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: #fefdfa; color: #333333;" /><span style="background-color: #fefdfa; color: #333333;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="background-color: #fefdfa; color: #7d181e; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="background-color: #fefdfa; color: #333333;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="background-color: #fefdfa; color: #7d181e; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-1025323088257060902019-12-18T00:32:00.001-08:002019-12-18T00:32:31.010-08:00Room Temperature Bonding of Wafers Using Si and Ge Films with Extremely Low Electrical Conductivity<span style="color: #333333;"><span style="font-family: Arial, Helvetica, sans-serif;">The technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films was studied. Transmission electron microscopy images revealed no interface corresponding to the original films surfaces for bonded a–Ge–a–Ge films. Analyses of film structure and the surface free energy at the bonded interface revealed higher bonding potential at the connected a–<b>Ge</b>–a–Ge interface than that of a–Si films. The electrical resistivity of a-Ge films is 0.62 Ωm, which is lower than that of a-Si film (4.7 Ωm), but 7–8 order higher than that of representative material films used for bonding in vacuum. Our results indicate that room temperature bonding using a–Ge films is useful to bond wafers without any marked influence on the electrical properties of devices on wafer surfaces caused by the electrical conductivity of films used for bonding.</span></span><br />
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<span style="font-size: x-small;"><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;">Source:IOPscience</span><br style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;" /><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;"><a href="http://www.semiconductorwafers.net/" style="color: #7d181e; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;" /><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;">send us email at </span><a href="mailto:sales@powerwaywafer.com" style="background-color: #fefdfa; color: #7d181e; font-family: Arial, Helvetica, sans-serif; text-decoration-line: none;">sales@powerwaywafer.com</a><span style="background-color: #fefdfa; color: #333333; font-family: Arial, Helvetica, sans-serif;"> and </span><a href="mailto:powerwaymaterial@gmail.com" style="background-color: #fefdfa; color: #7d181e; font-family: Arial, Helvetica, sans-serif; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-78535907023008290632019-12-12T01:34:00.003-08:002019-12-12T01:34:26.764-08:00Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">In this report, we present results of an experimental investigation of a near mid-gap trap energy level in InAs</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">10 ML</span><span style="color: #333333;">/<b>GaSb</b></span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">10 ML</span><span style="color: #333333;"> type-II superlattices. Using thermal analysis of dark current, Fourier transform photoluminescence and low-frequency noise spectroscopy, we have examined several wafers and diodes with similar period design and the same macroscopic construction. All characterization techniques gave nearly the same value of about 140 meV independent of substrate type. Additionally, photoluminescence spectra show that the transition related to the trap centre is temperature independent. The presented methodology for thermal analysis of dark current characteristics should be useful to easily estimate the position of deep energy levels in superlattice photodiodes.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;"><br /></span><span style="background-color: white; color: #222222;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: white; color: #222222;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: white; color: #222222;"><a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-11564821289280634802019-12-04T19:09:00.000-08:002019-12-04T19:09:01.471-08:00Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detection<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">The interfaces of InAs/GaSb superlattices (SLs) were studied with the goal of improving interband cascade infrared photodetectors (ICIPs) designed for the long-wavelength infrared region. Two ICIP structures with different SL interfaces were grown by molecular beam epitaxy, one with a ~1.2 monolayer (ML) InSb layer inserted intentionally only at the GaSb-on-InAs interfaces and another with a ~0.6 ML InSb layer inserted at both InAs-on-<b>GaSb</b> and GaSb-on-InAs interfaces. The material quality of the ICIP structures was similar according to characterization by differential interference contrast microscopy, atomic force microscopy, and x-ray diffraction. The performances of the ICIP devices were not substantially different despite the different interface structure. Both ICIPs had a peak detectivity of >3.7 </span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;"> 10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">10</span><span style="color: #333333;"> Jones at 78 K with a cutoff wavelength near 9.2 </span><i style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">μ</i><span style="color: #333333;">m. The maximum operation temperatures of both ICIPs were as high as ~250 K, although the structures were not fully optimized. This suggests that the two interface arrangements may have a similar effect on structural, optical and electrical properties. Alternatively, the device performance of the ICIPs may be limited by mechanisms unrelated to the interfaces. In either case, the arrangement of dividing a thick continuous <b>InSb </b>layer at the GaSb-on-InAs interface into thinner InSb layers at both interfaces can be used to achieve strain balance in SL detectors for longer wavelengths. This suggests that with further improvements ICIPs should be able to operate at higher temperatures at even longer wavelengths.</span></span><br />
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<span style="font-family: Arial, Helvetica, sans-serif; font-size: x-small;"><span style="background-color: white; color: #222222;">Source:IOPscience</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;"><br /></span><span style="background-color: white; color: #222222;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: white; color: #222222;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: white; color: #222222;"><a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222;" /><span style="background-color: white; color: #222222;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-68425706934967790832019-11-27T22:46:00.003-08:002019-11-27T22:46:29.477-08:00Reflectivity modulator based on GaSb/GaAs heterostructure<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">A structure of gallium antimonide (GaSb) and <b>gallium arsenide</b> (GaAs) wafers is built to modulate light reflectivity at CO</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">2</span><span style="color: #333333;"> laser wavelength. A quantum well composed of <b>GaSb</b>/GaAs heterojunction with highly doped GaAs up to 3</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; font-weight: 700; line-height: inherit; margin: 0px; padding: 0px; vertical-align: baseline;">×</span><span style="color: #333333;">10</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">18</span><span style="color: #333333;"> cm</span><span style="border: 0px; bottom: 1ex; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; vertical-align: baseline;">-3</span><span style="color: #333333;"> is inserted inside a layer structure. A grating of periodic structure of GaAs and gold layer is added just below the substrate. Gsolver software is used to determine the reflectivity of incident light with the existence of free carriers. A voltage is applied to the doped layer to deplete the free electrons and the reflectivity is determined again. The significant difference in reflectivity between the two cases can be used to build a light reflectivity modulator device.</span></span><br />
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<span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">Source:IOPscience</span><br style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif; font-size: 13.2px;" /><span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><br /></span><span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif; font-size: 13.2px;" /><span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-87271111809382026522019-11-20T01:17:00.004-08:002019-11-20T01:17:51.028-08:00Interfacial and mechanical characterization of wafer-bonded GaSb/amorphous α-(Ga,As)/GaAs structure for GaSb-on-insulator applications<span style="color: #333333; font-family: minion-pro, Georgia, "Times New Roman", STIXGeneral, serif; font-size: 18px;">In this study, the feasibility of using wafer-bonding technology to fabricate a GaSb semiconductor on GaAs substrates for potentially creating a GaSb-on-insulator structure has been demonstrated. A <b>GaSb wafer</b> has been bonded on two types of GaAs substrates: (1) a regular single crystal semi-insulating GaAs substrate and (2) the GaAs wafers with pre-deposited low-temperature amorphous α-(Ga,As) layers. The microstructures and interface adhesion studies have been carried out on these wafer-bonded semiconductors. It has been found that the GaSb-on-α-(Ga,As) wafers have shown enhanced interface adhesion and lower temperature bonding capability.</span><br />
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<span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">Source:IOPscience</span><br style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif; font-size: 13.2px;" /><span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><br /></span><br />
<span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">For more information, please visit our website: </span><span lang="EN-US" style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="background-color: white; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span><br />
<span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-52202210407762509232019-11-11T18:56:00.001-08:002019-11-11T18:56:16.920-08:00nvestigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices<span style="font-family: Arial, Helvetica, sans-serif;"><span style="color: #333333;">In this report, we present results of an experimental investigation of a near mid-gap trap energy level in InAs</span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">10 ML</span><span style="color: #333333;">/<b>GaSb</b></span><span style="border: 0px; color: #333333; font-stretch: inherit; font-variant-east-asian: inherit; font-variant-numeric: inherit; height: 0px; line-height: 1; margin: 0px; padding: 0px; position: relative; top: 0.5ex; vertical-align: baseline;">10 ML</span><span style="color: #333333;"> type-II superlattices. Using thermal analysis of <b>dark current</b>, Fourier transform photoluminescence and low-frequency noise spectroscopy, we have examined several wafers and diodes with similar period design and the same macroscopic construction. All characterization techniques gave nearly the same value of about 140 meV independent of substrate type. Additionally, photoluminescence spectra show that the transition related to the trap centre is temperature independent. The presented methodology for thermal analysis of dark current characteristics should be useful to easily estimate the position of deep energy levels in superlattice photodiodes.</span></span><br />
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<span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">Source:IOPscience</span><br style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif; font-size: 13.2px;" /><span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;"><br /></span><span style="background-color: white; color: #222222; font-family: Arial, Tahoma, Helvetica, FreeSans, sans-serif; font-size: 13.2px;"></span><br />
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<span style="font-family: arial, helvetica, sans-serif;">For more information, please visit our website: <span lang="EN-US"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="color: black;"><a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span></span></div>
<span style="background-color: white; color: #222222; font-family: arial, helvetica, sans-serif; font-size: 13.2px;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888; text-decoration-line: none;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888; text-decoration-line: none;">powerwaymaterial@gmail.com</a></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0tag:blogger.com,1999:blog-6645953540161879178.post-84871504822847083142019-11-06T19:23:00.005-08:002019-11-06T19:24:17.485-08:00Thermophotovoltaic furnace–generator for the home using low bandgap GaSb cells<span style="font-family: Arial, Helvetica, sans-serif;">It is well known that distributed combined heat and power (CHP) systems for commercial and industrial buildings are economically desirable because they conserve energy. Here, a thermophotovoltaic (TPV) unit is described that brings CHP into the home providing both heat and <b>electric power</b> by replacing the typical home heating furnace with a combined TPV furnace–generator. First, the design of a 1.5 kWelectric/12.2 kWthermal TPV furnace–generator is described along with the key components that make it possible. Diffused junction GaSb cells are one of these key components. Secondly, an economic cost target is determined for this system where the cost of the<b> photovoltaic array</b> will be key to the economical implementation of this concept. Finally, it is argued that the GaSb cells and arrays can be manufactured at the required low cost. The cost target can be reached because the GaSb cells in the TPV furnace–generator can produce an electrical power density of 1 W cm−2 which is 100 times higher than the typical solar cell. The cost target can also be reached because the GaSb cell fabrication process parallels the silicon solar cell process where no toxic gases are used, no wafer polish is required and cast polycrystalline cells can be used.</span><br />
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<span style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;">Source:IOPscience</span><br />
<span style="font-family: Arial, Helvetica, sans-serif;"><span style="background-color: white; color: #222222;"><br /></span><span style="background-color: white; color: #222222;"></span></span>
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<span style="font-family: Arial, Helvetica, sans-serif;">For more information, please visit our website: <span lang="EN-US"><v:shapetype coordsize="21600,21600" filled="f" id="_x0000_t75" o:preferrelative="t" o:spt="75" path="m@4@5l@4@11@9@11@9@5xe" stroked="f"> <v:stroke joinstyle="miter"><v:formulas><v:f eqn="if lineDrawn pixelLineWidth 0"><v:f eqn="sum @0 1 0"><v:f eqn="sum 0 0 @1"><v:f eqn="prod @2 1 2"><v:f eqn="prod @3 21600 pixelWidth"><v:f eqn="prod @3 21600 pixelHeight"><v:f eqn="sum @0 0 1"><v:f eqn="prod @6 1 2"><v:f eqn="prod @7 21600 pixelWidth"><v:f eqn="sum @8 21600 0"><v:f eqn="prod @7 21600 pixelHeight"><v:f eqn="sum @10 21600 0"></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:f></v:formulas><v:path gradientshapeok="t" o:connecttype="rect" o:extrusionok="f"><o:lock aspectratio="t" v:ext="edit"></o:lock></v:path></v:stroke></v:shapetype><v:shape id="图片_x0020_1" o:spid="_x0000_i1025" style="height: 11.25pt; visibility: visible; width: 15pt;" type="#_x0000_t75"><v:imagedata o:title="%W@GJ$ACOF(TYDYECOKVDYB" src="file:///C:\Users\ADMINI~1\AppData\Local\Temp\msohtmlclip1\01\clip_image001.png"></v:imagedata></v:shape></span><span lang="EN-US" style="color: black;"><a href="http://www.semiconductorwafers.net/" style="color: #888888; text-decoration-line: none;">www.semiconductorwafers.net</a>,</span></span></div>
<span style="background-color: white; color: #222222; font-family: Arial, Helvetica, sans-serif;">send us email at <a href="mailto:sales@powerwaywafer.com" style="color: #888888;">sales@powerwaywafer.com</a> and <a href="mailto:powerwaymaterial@gmail.com" style="color: #888888;">powerwaymaterial@gmail.com</a></span>powerway wafer_Powerway Wafer Co., Limitedhttp://www.blogger.com/profile/13259129040002814344noreply@blogger.com0