2020年1月7日星期二

H 2 O 2 :  HF  :  C 4 O 6 H 6    ( Tartaric Acid )  :  H 2 O  Etching System for Chemical Polishing of GaSb

We present the results of a study of  solution for chemical polishing of  wafers. The influence of etching solution composition on surface morphology was studied. The solutions investigated varied in  (2.0–3.0 mol) and (0.0–5.0 mol) concentrations, but contained a constant concentration of tartaric acid (0.7 mol). It was found that the etchant has excellent polishing properties for  wafers when the  concentration was less than 1.5 mol. For  concentration larger than 1.5, the etchant solution produced rough surfaces. The dependencies of the etching rate on solution composition, temperature, and etching time were studied.

Source:IOPscience

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