GaSb samples were implanted by 100 keV
hydrogen ions (H+) at room temperature with fluence values of 1 × 1017 and
2 × 1017 ions cm−2. Post-implantation annealing studies revealed that the
samples implanted with a fluence of 2 × 1017 ions cm−2 did not show
blistering/exfoliation. For the lower fluence, the samples showed the formation
of surface blisters/craters along with the large area exfoliation of the top
H-implanted surface. Topographical investigations of the samples were carried
out using Nomarski optical microscopy, atomic force microscopy and stylus
surface profilometry. The lateral sizes and heights of the blisters varied
between 2–5 µm and 5–20 nm respectively. The root mean square roughness of the
exfoliated region was about 12 nm while the exfoliation depth was found to be
730 nm. The exfoliation depth in the H-implanted GaSb is close to the damage
concentration peak as found from SRIM calculations. The Föppl–von Karman theory
of thin plates has been used to understand the effect of internal pressure and
stress on the surface blistering. Using the above mentioned implantation and
annealing parameters, potential layer transfer of GaSb could be enabled.
Source:IOPscience
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