The growth of in-plane GaSb nanotemplates on
a GaAs (001) substrate is demonstrated combining nanoscale patterning of the
substrate and selective area heteroepitaxy. The selective growth of GaSb inside
nano-stripe openings in a SiO2 mask layer is achieved at low temperature thanks
to the use of an atomic hydrogen flux during the molecular beam epitaxy. These
growth conditions promote the spreading of GaSb inside the apertures and
lattice mismatch accommodation via the formation of a regular array of misfit
dislocations at the interface between GaSb and GaAs. We highlight the impact of
the nano-stripe orientation as well as the role of the Sb/Ga flux ratio on the
strain relaxation of GaSb along the [110] direction and on the nanowire length
along the [1-10] one. Finally we demonstrate how these GaSb nanotemplates can
be used as pedestals for subsequent growth of in-plane InAs nanowires.
Source:IOPscience
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