A localized vibrational mode (LVM) with a
remarkable fine structure is observed in the infrared transmission spectrum of
a ZnTe epilayer grown with molecular beam epitaxy (MBE) on a GaSb substrate. On
the basis of the Zn and Te deposited on the GaSb substrate during the MBE
growth of ZnTe, and assuming diffusion of Zn and Te into GaSb, the LVM is
attributed to Zn, substitutionally replacing either the cation, Ga (ZnGa), or
the anion, Sb (ZnSb). The frequency of the LVM and its fine structure can then
be interpreted in terms of the infrared active modes of 64Zn substituting for
Sb as an anti-site impurity and treating the centre as an XY4 quasimolecule.
With X≡64Zn and Y≡69Ga and 71Ga, occupying the nearest-neighbour sites
reflecting all the possible combinations and permutations as well as the
natural isotopic abundance of Ga, the fine structure of the LVM can be
accounted for quantitatively.
Source:IOPscience
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