Thermodynamic theory for GaSb single crystals doped with sulphur

The Ga-Sb-S-H system was thermodynamically treated in order to estimate the maximum level of sulphur doping in GaSb single crystals grown by the Czochralski technique without encapsulant in a flowing atmosphere of hydrogen, the growth rate being 1.2 cm h-1. The calculated concentration of dissolved sulphur in GaSb solid was 1016-1017 atoms/cm3, which is in good agreement with the experimentally measured values of about 1017 atoms/cm3 in the GaSb single crystals. After exceeding approximately 1.5*1018 atoms/cm3 in the melt, the second phase (Ga2S) started to separate spontaneously in the melt; the single-crystalline growth was impaired and became either polycrystalline or twin-like.

Source:IOPscience

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