The use of lateral oxidation for electrical and optical confinement on a GaSb-based mid-infrared vertical light-emitting diode is demonstrated in this paper. The metamorphic growth of (Al)GaAs above a tunnel junction grown on the GaSb-based resonant-cavity light-emitting diode enables good structural quality of the As-based layers and oxidation of the AlAs embedded film. Oxide-confined devices with emission wavelength around 2.6 µm are demonstrated, with no noticeable degradation from the oxidation thermal treatment. Such an efficient oxide confinement scheme can be applied for the realization of high-performance mid-infrared vertical-cavity lasers.
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