Electrical and optical performances with extracted minority carrier lifetimes of InAs/GaSb SL photodetector operating in the mid wavelength infrared range

Highlights

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Optical and electrical performance of InAs/GaSb based T2SL detector are analysed.

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The T2SL structure is designed to operate with high quantum efficiency in the MWIR.

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Band structure of T2SL are analysed by SEPM calculations.

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Minority carrier lifetimes are highly important for understanding of carrier transport and improving the device performance.

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Shockley Model is used to extract the minority carrier lifetimes from temperature dependence of J-V measurements.

Abstract

We report a study on the temperature dependence of electrical and optical performance of InAs/GaSb based type-II superlattice (T2SL) pin photodetectors in the mid wavelength infrared range (MWIR). The SL structure exhibits an optical response of 50% cut-off wavelength at 4.9 μm at 79 K. Deduced from current density–voltage (J–V) measurements, dark current density under 0.1 V reverse bias is measured as 7.6 × 10−6 A/cm2 with a corresponding differential–resistance–area product (R0A) of 3.3 × 104 Ωcm2 at 100 K. Minority carrier lifetimes of the T2SL detectors are analysed by Shockley's Model where experimental data for dark current densities are fitted by diffusion and generation-recombination (GR) components at different temperatures.

source:ScienceDirect

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