Enhancement in below bandgap room temperature infrared transmission has been observed in tellurium (Te)-doped GaSb bulk crystals. The effect of Te concentration on the transmission characteristics of GaSb has been experimentally and theoretically analysed. Undoped GaSb is known to exhibit p-type conductivity with residual hole concentration of the order of (1–2) × 1017 cm−3 at room temperature due to the formation of native defects. For such samples, inter-valence band absorption has been found to be the dominant absorption mechanism. The residual holes could be compensated by n-type dopants such as Te. With increasing Te concentration, free carrier absorption due to electrons and inter-valley transitions in the conduction subband become significant. The dependences of various absorption mechanisms as a function of wavelength have been discussed in this paper.
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