Abstract
The growth of Sb nanowires on GaSb(111)A substrates is studied by in situ azimuthal scan reflection high-energy electron diffraction (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the
and the GaSb crystal along
directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy.
![$\langle \bar {2}10\rangle $](http://cdn.iopscience.com/images/0957-4484/23/23/235301/nano421198ieqn1.gif)
![$\langle \bar {1}10\rangle $](http://cdn.iopscience.com/images/0957-4484/23/23/235301/nano421198ieqn2.gif)
Source:IOPscience
For more information, please visit our website:www.powerwaywafer.com,send us email at: angel.ye@powerwaywafer.com or or powerwaymaterial@gmail.com.
没有评论:
发表评论